Single source precursor heterocycle

Later on, this concept was extended to precursors containing both elements of the desired material already connected by a chemical bond in a single molecule. Such precursors are mainly referred to as single source precursors. Their potential application for the deposition of thin films of the corresponding binary materials by MOCVD processes could be demonstrated. In particular Lewis acid-base adducts R3M—ER3 and four- and six-membered heterocycles [R2MER x (Fig- 1) have been in the focus of research groups both in industry and university. Consequently, the development of powerful synthetic pathways for the preparation of such precursors has been forced. 

Syntheses, structures and properties of heterocyclic group 13/15 compounds of the type [R2M LR 2]V have been the subject of intense studies for many years. In particular, aminoalanes and -gallanes [IGIVINR/ (M = Al, Ga) have received considerable attention. The interest in these particular compounds has increased within the last two decades due to their potential application as single source precursors for the deposition of AIN and GaN... 

These results clearly demonstrate the high potential of the single source precursor concept. In particular, the low deposition temperatures necessary for the stibinoalanes and the low carbon contents of the resulting material films are very promising results. However, the low vapor pressure of the heterocycles, which require sublimation temperatures about 130 °C, are a major drawback. 

This review has described the synthesis, structure and reactivity of important classes of group 13/15 compounds such as Lewis acid base adducts and heterocycles. In addition, their potential to serve as single source precursors for the deposition of the corresponding binary materials by MOCVD process has been demonstrated. Because of the large number of compounds containing the lighter elements of group 15, N, P and As, these... 

Helical structurespolysilane, 139-141, 163 Heterocumulenes, 25-29 Heterocycles, 251, 252, 275, 276 organoantimony, 104-105, 116-118 R2MER/,X type, 257-275 as single source precursors, 299-303... 

Abstract The review summarizes recent studies on the synthesis of M - Sb compounds and their potential application to serve as single-source precursor in MOCVD processes. General reaction pathways for the synthesis of simple Lewis acid-base adducts R3M - ER 3 and heterocycles of the type [R2MSbR 2]x (M = Al, Ga, In) are described. As-formed compounds were studied in detail in MOCVD processes using hot-wall and cold-wall reactors. Advantages as well as problems using single-source precursors are described. 

An alternative concept for the deposition of III-V material films, the so-called single-source precursor concept, was introduced by Cowley, Jones and others almost 15 years ago [10]. Typical group 13/15 single-source precursors such as Lewis acid-base adducts R3M - ER 3 or heterocycles [R2MER 2]% as shown in Scheme 1 contain the specific elements of the desired material connected by a stable chemical bond in a single molecule. 

The reactivity of the four-membered ring heterocyclic molecule Cp2Ti(GH2SiMe2NSiMe3) as a single-source precursor to titanium-based ceramic thin films has been studied under atmospheres of nitrogen, argon, and... 

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