Single photon counting avalanche photodiodes

Fig. 14 Typical time course of the fluorescence intensity of single Cy3 molecules. The fluorescence intensity was measured with an avalanche photodiode single photon counting module (SPCM-AQR-16, Perkin Elmer, Canada). Excitation wavelength, 514.5 nm. Sampling interval, 30 ms...

Brown and coworkers have tested avalanche photodiodes (APD) as replacements for PMTs. Preliminary tests were encouraging. Single photon counting was possible, though dead-time effects in the range of 1-2 /as limited the maximum count rate. Special active quenching circuitry has reduced this... 

Not only PMTs and other detectors such as avalanche photodiodes suffer from dead-time effects also the detection electronics may have significant dead-times. Typical dead-times of TCSPC electronics are in the range 125-350 ns. This may seriously impair the efficiency of detection at high count rates. The dead-time effects of the electronics in time-gated single photon detection are usually negligible. 

Like all photon counting techniques, gated photon counting uses a fast, high-gain detector, which is usually a PMT or a single-photon avalanche photodiode. Due to the moderate time resolution of the gating technique, there are no special requirements to the transit time spread of the detector. However, the transit time distribution should be free of bumps, prepulses or afterpulses, and should remain stable up to a count rate of several tens of MHz. 

Currently available single photon avalanche photodiodes (SPADs) are not applicable to optical tomography. Although the efficiency in the NIR can be up to 80%, the detector area is only of the order of 0.01 mm. Diffusely emitted light cannot be concentrated on such a small area. A simple calculation shows that SPADs carmot compete with PMTs unless their active area is increased considerably. Another obstacle is the large IRF count-rate dependence sometimes found in single-photon APDs. 

TTS exists also in single photon avalanche photodiodes (SPADs). The source of TTS in SPADs is the different depth at which the photons are absorbed, and the nonuniformity of the avalanche multiplication efficiency. This results in differing delays in the build-up of the carrier avalanche and in different avalanche transit times. Consequently the TTS depends on the wavelength and the voltage. Moreover, if a passive quenching circuit is used, the reverse voltage may not have completely recovered from the breakdown of the previous photon. The result is an increase of the TTS width or a shift of the TTS with the count rate. 

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