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Single-molecule transistor Coulomb

Cgo single molecules between electrodes fabricated by electromigration [103] to create single Cgo molecule transistors were measured at a temperature of 40 mK. The results showed the coexistence and competition of the effects of Coulomb repulsion, Kondo correlations and superconductivity [104]. The Kondo effect had been previously observed in similar devices [105]. Recently a SAM of a tricarboxylic acid fullerene derivative was used to fabricate a transistor. The SAM was created by allowing the fullerene compound to self assemble on top of an AI2O3 layer just above the aluminum drain electrode the source lead was created by... [Pg.139]

See other pages where Single-molecule transistor Coulomb is mentioned: [Pg.76]    [Pg.97]    [Pg.386]    [Pg.76]    [Pg.69]    [Pg.51]    [Pg.363]    [Pg.371]    [Pg.292]    [Pg.811]    [Pg.160]    [Pg.1357]    [Pg.408]    [Pg.428]    [Pg.430]    [Pg.614]    [Pg.71]    [Pg.280]    [Pg.226]   


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Single-molecule transistor

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