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Simulations for the MIS Capacitor

In principle the situation seems to be similar for energetically distributed traps with Gaussian or exponential density of states. But especially in the case of an exponential trap density of states in the gap with the maximum at a distance Eq above the valence band edge [Pg.327]

Simulations for Thin-Layer OFETs and the Corresponding Capacitor [Pg.329]


See other pages where Simulations for the MIS Capacitor is mentioned: [Pg.327]   


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