Silicon growth-rate profiles

As in all microfabrication processes, the cleanliness of the substrate is very critical for the silicon oxidation process. As discussed above, the crystalline orientation will influence the oxidation rate of silicon dioxide. There are other operational parameters that will affect the oxidation rate of silicon. This includes the dopants in silicon, the trace amount of water, the concentration of Cl-bearing species, the temperature control, and its profile. Extensive assessment of each parameter on the growth rate and the quality of the Si02 layer on silicon can be found in microfabrication related literature elsewhere. ... 

The deposition of Si02 by several CVD processes and surface reactions of gaseous reactants with a Si02 surface has been monitored in situ by ATR and the standard FTIR transmission methods [53,119-121]. Using these methods, information about the IR absorption of the surface species, the film, and the ambient gas in the reactor during the film growth can be obtained. It is well known that CVD parameters such as the quality of the film, the rate of deposition, and the profile of chemical composition are sensitive to the transport and reactions of species in the plasma as well as to the surface reactions. The IR absorption of CVD silicon dioxide after deposition (ex situ) was considered in Section 5.2. 

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