Silicon-germanium alloys properties

Eberl, K. Schmidt, O.G. and Duschl, R. Structural Properties of SiC and SiGeC Alloy Layers on Si, in Properties of Silicon Germanium ondSiGe Carbon. Erich Kasper and Klara Lyutovich, cds., London, INSPEC, 2000. 

Figure 6.13 Electron and hole mobilities in Sii. Gex alloys. Solid lines and figures refer to electron properties while dashed lines and points represent hole behaviors. Figure redrawn with permission from Van der Walle, C.B. SiGe heterojunctions and band offsets, in Kasper, Erich, and Lyutovich, Klara, editors. Properties of Silicon Germanium and SiGe.Carbon. London INSPEC, 2000, p. 149. Copyright 2000, The Institution of Engineering Technology.

The elements of group IVb of the periodic table are germanium, tin, and lead. Germanium is intermediate in its properties between silicon and tin. A brief statement about its properties and uses is given below. Tin and lead are ery important metals. They are easily extracted from their ores, and have been known since ancient times. The metals themselves and their alloys have many uses. 

The electrical properties of a single crystal of germanium (or silicon) can be drastically changed by alloying the element with very small amounts of other elements. As explained in the following paragraphs, these effects are the basis of the operation of the semiconductor junction rectifier, the transistor, and integrated circuits. 

H R Meddins and J E Parrot, The Thermal and Thermoelectnc Properties of Sintered Germanium-Silicon Alloys, 7 Phys C SolidStatePhys y9 916) 1263-1276... 

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