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Silicon free energy change

The standard free energy of formation of cubic silicon carbide (SiC) is (62.8 kJ moC. Determine the standard free energy change when 1.00 mol SiC reacts with oxygen to form Si02 [s, quartz) and C02(g). Is silicon carbide thermodynamically stable in the air at room conditions ... [Pg.927]

Calculate the change of the standard molar free energy of silicon for the change of the standard state from Raoultian to Henrian. [Pg.124]

The formation of surface pores, the changes in the polar component of the surface free energy, and the disruption and formation of centers of specific adsorption in the course of ion bombardment considerably affect the cell adhesion at the ion-implanted polymers, which opens up new possibilities for controlling the biocompatibility of polymer materials [76,77]. Thus the changes in the dynamics of plasma protein adsorption at silicon rubber upon implantation with 150-keV, ... [Pg.403]

See other pages where Silicon free energy change is mentioned: [Pg.257]    [Pg.331]    [Pg.162]    [Pg.373]    [Pg.152]    [Pg.268]    [Pg.271]    [Pg.618]    [Pg.23]    [Pg.119]    [Pg.141]    [Pg.662]    [Pg.150]    [Pg.167]    [Pg.623]    [Pg.100]    [Pg.113]    [Pg.137]    [Pg.200]    [Pg.22]    [Pg.15]    [Pg.448]    [Pg.449]    [Pg.47]    [Pg.330]    [Pg.20]    [Pg.134]    [Pg.108]    [Pg.209]    [Pg.143]    [Pg.600]    [Pg.464]    [Pg.296]    [Pg.63]    [Pg.623]    [Pg.189]    [Pg.240]    [Pg.224]    [Pg.76]    [Pg.54]    [Pg.373]    [Pg.85]    [Pg.227]    [Pg.47]    [Pg.532]   
See also in sourсe #XX -- [ Pg.781 ]



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