Silicon first principles theory

In 1985 Car and Parrinello invented a method [111-113] in which molecular dynamics (MD) methods are combined with first-principles computations such that the interatomic forces due to the electronic degrees of freedom are computed by density functional theory [114-116] and the statistical properties by the MD method. This method and related ab initio simulations have been successfully applied to carbon [117], silicon [118-120], copper [121], surface reconstruction [122-128], atomic clusters [129-133], molecular crystals [134], the epitaxial growth of metals [135-140], and many other systems for a review see Ref. 113. 

This chapter summarizes the main theoretical approaches to model the porous silicon electronic band structure, comparing effective mass theory, semiempirical, and first-principles methods. In order to model its complex porous morphology, supercell, nanowire, and nanocrystal approaches are widely used. In particular, calculations of strain, doping, and surface chemistry effects on the band structure are discussed. Finally, the combined use of ab initio and tight-binding approaches to predict the band structure and properties of electronic devices based on porous silicon is put forward. 

Zonias N, Lagoudakis P, Skylaris C-K (2010) Large-scale first principles and tight-binding density functional theory calculations on hydrogen-passivated silicon nanorods. J Phys Condens Matter 22 025303... 

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