Silicon film growth radicals

Surface bombardment by positive ions (particularly SiH ) plays a critical role in the growth of amorphous silicon films. The silane radicals SiHs and SiH2 have a positive electron affinity therefore, the silane discharge is essentially electronegative and dissociative attachment processes make a significant contribution in the balance of charged particles and production of negative silane ions ... 

The most important precursors for amorphous silicon thin-film growth are silane radicals, SiHs and SrH2, produced by direct electron impact dissociation of the silane molecules (SiH4) ... 

The most conventional non-equilibrium plasma-chemical systems that produce diamond films use H2-CH4 mixture as a feed gas. Plasma activation of this mixture leads to the gas-phase formation of hydrogen atoms, methyl radicals (CH3), and acetylene (C2H2), which play a major role in further film growth. Transport of the gas-phase active species to the substrate is mostly provided by diffusion. The substrate is usually made from metal, silicon, or ceramics and is specially treated to create diamond nucleation centers. The temperature of the substrate is sustained at the level of 1000-1300 K to provide effective diamond synthesis. The synthesis of diamond films is provided by numerous elementary surface reactions. Four chemical reactions in particular describe the most general kinetic features of the process. First of all, surface recombination of atomic lydrogen from the gas phase into molecular hydrogen returns back to the gas phase ... 

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