Silicon dislocation source

Figure 3.14. Optical micrograph of a dislocation source in silicon, decorated with copper...

In this paper, we have given a summary of some of the aspects of the work done in our laboratory on hydrogen passivation in polycrystalline silicon ribbon. We have shown that the dominant defects being passivated are dislocations, that many of the dislocation-related defects can be passivated quite readily using a Kaufman ion source, and that passivation can proceed to depths > 200 pm in some cases with diffusivities down dislocation arrays > 10- cm /sec. Several examples have been chosen to demonstrate the enormous utility of the EBIC technique in studying passivation. 

Dash s observations [13] of Frank-Read sources in silicon, revealed by the copper decoration technique, showed that the dislocations have a pronounced tendency to... 

Although the deformation microstructures are different in these two orientations, the analysis of surface source nucleation mechanisms in silicon led to the conclusion that the activation energies for the movement of decorrelated partials and of dissociated dislocations should be the same at high stresses, in agreement with the apparent macroscopic response [57]. 

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