Silicon contamination during removal

Finally, with some precursors, complete removal of contaminants can sometimes be troublesome. Consequently, some authors have chosen to use dioxygen as the reactive gas to avoid carbon contamination [62-64]. Thus, pure platinum films have been obtained on thermally oxidized silicon substrate by decomposition of [Pt(CH3)3(CpCH3)j or [Pt(K -acac)2] in ArjOj mixtures at 623 K. Pt films produced from [Pt(K -acac)2] contained less than lat% carbon, while oxygen contamination was not detectable [64]. Similarly, a significative reduction of carbon incorporation into Ru films was evidenced when oxygen was used as a reactive gas during CVD from [RuCp(CO)2]2 [62]. 

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