Silicon carbide grain boundary film

HRTEM observations of three differently misoriented interphase boundaries between hexagonal boron nitride (h-BN) and 3C silicon carbide (3C SiC) grains showing an orientation dependence on equilibrium film thickness. In (a) and (b) the (0001) of the highly anisotropic b-BN are parallel to the interface, whereas in (c) they make an angle of 68° with the interphase boundary (reprinted from Ultramicroscopy, Knowles KM and Turan S, The dependence of equilibrium film thickness on grain orientation at interphase boundaries in ceramic-ceramic composites, 83(3/4) 245-259 (2000) with kind permission of Elsevier Science). 

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