SiCH Films

Figure 3 STM image of initial Pd/SiCh film structure, 200x200 nm.

In reactive etching, a patterned film is selectively etched by reacting it with a gas such as chlorine (Si -1- 2CI2 => SiCh). 

Figure 6. Plots of In (A/Ao) as a function of pyrolysis time at 600°C for (a) SiH, SiCHs and (b) NH groups open symbols polymer film deposited without ammonia full symbols polymer film...

Yoshiki, H. Abe, K. Mitsui, T. (2006). SiCh thin film deposition on the inner surface of a poly(tetra-fluoroethylene) narrow tube by atmospheric pressure glow microplasma. Thin Solid Films, VoL 515, pp. 1394-1399 Yoshiki, H. Mitsui, T. (2008).TiO2 thin film coating on a capillary inner surface using atmospheric-pressure microplasma. Surf Coat Technol, Vol. 202, pp. 5266-5270... 

Okuyama, K., Huang D., Seinfeld, J.H., Naoyuki, T, Yasuo, K., 1991. Aerosol formation by rapid nudeation during the preparation of Si02 thin films from SiCh and O2 gases by CVD process. Chemical Engineering Science 46 (7), 1545-1560. 

Polyimides exhibit outstanding dielectric and mechanical properties at elevated temperatures. Nevertheless, relatively high values of water sorption (up to 3-4 wt%) and coefficients of thermal expansion (5x10 K l) impede (micro)electronic applications, e.g., forming stress-free films on silicon substrates. From this point of view silica (SiCh), that exhibits very low values of water sorption and coefficients of thermal expansion (5x10- K- ), would be more suited for (micro)electronic applications but dielectric properties and planarizability are inferior to PI [17].Combined materials exhibiting favourable properties of both polyimides and silica are therefore in great demand. 

Table 25.6 Adhesion Enhancer/Cross-Linker (MeO) SiCH,CH,Si(OMe) Adhesion of Epoxy Film on Glass...

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