SiC Substrates for Growth of GaN and Related Compounds

The influence of the surface polarity of SiC has been recently investigated. Sasaki and Matsuoka [17,18] reported that the surface polarity of the SiC substrate has a pronounced impact on the 

Growth method Buffer layer (Growth temp.) Substrate XRCFWHM arcsec, unless noted Ref 

TABLE 2 lists the lattice parameters and thermal expansion coefficients of 6H-SiC, AIN and GaN [23-27], The lattice mismatch and the differences in thermal expansion coefficients (TEC) between GaN films and SiC substrates result in strain in the former which has been investigated by several 

TABLE 2 Lattice parameters and thermal expansion coefficients for 6H-SiC, AIN and GaN. 

Material Lattice parameter, A Thermal expansion coefficients, x 106 K, (a  

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B2.2 SiC substrates for growth of GaN and related compounds TABLE 1 Summary of XRD diffraction measurements of GaN films grown on 6H-SiC. 

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