Short Channel OFET Based on P3HT

The silicon dioxide gate insulator is 30 nm thick. This short channel has been prepared without high resolution lithography by using undercutting for the definition of the sub-micrometer channel length. 

one can phenomenologically describe the process as follows. During the waiting time before the back sweep, the fraction Ag of the accumulated holes has been transformed from mobile to immobile at the interface. This gives no explanation of the microscopic processes. Different possibilities will be discussed in Sections 16.4 and 16.6. 

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