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Shallow trench isolation CMP

A key benefit of accurate CMP models that needs emphasis is the capability to optimize layout design before polishing. Post-CMP ILD thickness variation is a serious concern from both functionality and reliability concerns. An effective method of minimizing this effect is the use of dummy fill patterns that lead to a more equitable pattern density distribution across the chip. Evaluation of such schemes before actual product implementation has become a major use of CMP modeling [53]. Dummy fill is also being investigated for front-end processes where shallow trench isolation CMP suffers from substantial pattern dependencies. [Pg.125]

Boning D, LeeB. Nanotopography issues in shallow trench isolation CMP. MRS Bulletin Oct 2002. p 761-765. [Pg.367]

Park H, Jung J, Park J, Shin J, Ryu C-H. Effects of abrasive size and surfactant concentrations in ceria slurry for shallow trench isolation CMP. Proceedings Ninth International CMP-MIC Conference at Santa Clara, CA 2005. p357. [Pg.398]

See other pages where Shallow trench isolation CMP is mentioned: [Pg.433]    [Pg.35]    [Pg.37]    [Pg.39]    [Pg.41]    [Pg.43]    [Pg.45]    [Pg.47]    [Pg.49]    [Pg.51]    [Pg.53]    [Pg.55]    [Pg.57]    [Pg.59]    [Pg.61]    [Pg.63]    [Pg.65]    [Pg.67]    [Pg.69]    [Pg.71]    [Pg.73]    [Pg.75]    [Pg.78]    [Pg.182]    [Pg.214]   
See also in sourсe #XX -- [ Pg.433 , Pg.435 , Pg.436 ]



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