Semiconductors transport base description

An important question for any modeling effort, especially one aimed at a quantitative description of complex transport processes, is the level of accuracy of the model. As will become evident in the discussion of transport models and specific calculations, the values for thermophysical properties and transport coefficients must be known, as well as the dependence of these coefficients on temperature and pressure. Information is lacking for this data base. Critical material properties for semiconductor materials are not known... 

This method has been successfully applied to the theoretical description of hopping transport in doped crystalline semiconductors [15] and also in disordered materials with exponential DOS [43], A treatment of charge transport in disordered systems with a Gaussian DOS in the framework of the percolation theory can be found in [34, 35, 44]. However, this theory is not easy for calculations. Therefore it is desirable to have a more transparent theoretical description of transport phenomena in disordered systems with a Gaussian DOS. In the next section we present such an approach based on the well-approved concept of the transport energy (TE). This concept was successfully applied earlier to describe transport phenomena in inorganic disordered systems with exponential DOS [28-30]. We show below how this concept works in both cases for exponential and for Gaussian DOS functions. 

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