Semiconductors surface chelation

Frei, H D. J. Fitzmaurice, and M. Gratzel (1990), "Surface Chelation of Semiconductors and Interfacial Electron Transfer , Langmuir 6,198-206. 

Karim, A. and S. Kumar Polymer Surfaces, Interfaces and Thin Films, World Scientific Publishing Company, Inc., River Edge, NJ, 1999 Lisenskey, G.C., et al. Electro-Optical Evidence for the Chelate Effect at Semiconductor Surfaces, Science, 840 (May 18. 1990). 

Frei, H. Fitzmaurice, D. J. Graetzel, M. Surface chelation of semiconductors and interfacia] electron transfer, Langmuir 1990, 6, 198. 

G. C. Lisensky et al., Electro-Optical Evidence for Chelate Effect at Semiconductor Surfaces, Science 1990, 248,840-843. 

Frei et al. [34[ examined the surface chelation of phenylfluorene on Ti02 using FT-IR and laser photolysis techniques. The surface chelate has its visible absorption band maximum located at 476 nm (e = 3.6x10 M cm ). Electronic excitation in the visible absorption band results in extremely rapid and efficient injection in the conduction band of the semiconductor. A lower limit for the rate constant of interfacial electron transfer was determined as 10 s l and the back electron transfer was found to occur with a specific rate of 2.8x10 s l. The injected electrons in the conduction band readily reduce electron acceptors such as methyl viologen efficiently in the same manner as when they are produced by bandgap excitation of the semiconductor. 

---