Semiconductors anionic, chemisorption

With the oxide semiconductors, anionic chemisorption would take place over the metal cations, and the interaction problem would be between the orbitals on the foreign atom and the cation band (the 3d band in CU2O, for example). The discussion in this section is relevant if this is the highest filled band. 

With the oxide semiconductors, cationic chemisorption should occur over the lattice anions, and we would expect therefore to have an interaction problem involving the anion bands as well as the cation band. This makes the whole problem much more complicated and because the cation-anion band model is not adequate for the transition metal oxides, we shall not discuss this problem here. 

Interactions at room temperature When CO is first introduced (Fig.l), a increases irtfantaneously and then remains independent of P 0. The fact that a does not decrease means that CO does not dissociate on titania nor at the interface, otherwise the filling of anionic vacancies by atomic oxygen (Eq,-6) would have decreased substantially a by consuming free electrons. The sharp initial increase, on the contrary, shows that CO chemisorb on Pt with a donor effect probably due to the creation of dipoles as proposed for H. chemisorption which renders ohmic the electrical contact between the metal and its semiconductor support (26, 17, 28)Accordlng to these authors, the creation of a dipole layer decreases the work function of the metal which approaches the electron affinity of the semiconductor, thus suppressing the Schottky barrier. Presently CO adsorbs as a donor molecule on Pt decreasing 0, which allows elec-... 

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