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Semiconductor/semiconductivity nanorod

The main approach to reach higher sensor sensitivity is based on maximization of the electron depletion layer compared with the semiconducting core this can be realized by decreasing the particle size down to the scale of the depletion layer thickness.6-8 Oxide semiconductors in the form of nanocrystalline powders,9-11 nanorods,12 nanowires,13-15 nanotubes,1617 and nanobelts18 with a high surface area/ volume ratio have been studied intensively as highly sensitive materials. [Pg.296]

Semiconducting nanowires, nanorods, nanodots, nanocones, nanopins, etc. are interesting due to their broad range of applications. Electrochemically, the most easily fabricated semiconductors are Il-Vl semiconductors, for example, CdS, CdSe. There are three approaches for electrodeposition of semiconductors. The first method [131] is deposition of metal in alumina nanopores, followed by etching of alumina surface by phosphoric/chromic acid to access metallic surface for sulphur or arsenic vapour to attain metal sulphide or arsenide nanostructures. The second method deals with electrolysis of sulphuric acid, causing the sulphide atoms to be deposited in pores. [Pg.93]


See other pages where Semiconductor/semiconductivity nanorod is mentioned: [Pg.285]    [Pg.440]    [Pg.798]    [Pg.19]    [Pg.101]    [Pg.248]    [Pg.440]    [Pg.113]    [Pg.204]    [Pg.101]   
See also in sourсe #XX -- [ Pg.171 , Pg.186 , Pg.187 ]




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