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Semiconductor pressure transducer

Pressure transducers based on the semiconductor materials on the basis of germanium, gallium antimonide, solid solutions of aluminum, and gallium arsenide have come into use lately. This type of pressure transducer, given in Figure 3.5, is sensitive to bulk compression and is characterised by low electric resistance, high sensitivity to pressure, and linear dependence of the electric resistance upon the pressure. Nonlinearity less than 1.5% is observed in the range up to 1000 bar. [Pg.76]

Figure 2.8 Typical semiconductor strain gage units (a) unbonded, uniformly doped (b) diffused p-type gage (c) integrated pressure sensor (d) integrated cantilever beam force sensor. (From R S C Cobbold Transducers for Medical Measurements Application and Design, copyright 1974, John Wiley and Sons, Inc.)... Figure 2.8 Typical semiconductor strain gage units (a) unbonded, uniformly doped (b) diffused p-type gage (c) integrated pressure sensor (d) integrated cantilever beam force sensor. (From R S C Cobbold Transducers for Medical Measurements Application and Design, copyright 1974, John Wiley and Sons, Inc.)...
See other pages where Semiconductor pressure transducer is mentioned: [Pg.42]    [Pg.262]    [Pg.74]    [Pg.77]    [Pg.77]    [Pg.42]    [Pg.262]    [Pg.74]    [Pg.77]    [Pg.77]    [Pg.442]    [Pg.762]    [Pg.1136]    [Pg.310]    [Pg.442]    [Pg.59]    [Pg.59]    [Pg.586]    [Pg.959]    [Pg.442]    [Pg.934]    [Pg.1305]    [Pg.939]    [Pg.1306]    [Pg.766]    [Pg.1140]    [Pg.109]    [Pg.41]    [Pg.549]    [Pg.9401]    [Pg.229]    [Pg.418]    [Pg.420]    [Pg.25]    [Pg.361]    [Pg.707]    [Pg.22]    [Pg.3685]    [Pg.1536]    [Pg.400]    [Pg.45]    [Pg.923]    [Pg.91]    [Pg.294]    [Pg.500]    [Pg.12]   
See also in sourсe #XX -- [ Pg.77 ]



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