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Semiconductor detectors radiation damage

The fabrication and operation of a semiconductor detector are based on the premise that one starts with a perfect crystal containing a known amount of impurities. Even if this is true at the beginning, a semiconductor detector will suffer damage after being exposed to radiation. The principal type of radiation damage is caused by the collision of an incident particle with an atom. As a result of the collision, the atom may be displaced into an interstitial position, thus creating an interstitial-vacancy pair known as the Frenkel defect. A recoiling... [Pg.260]


See other pages where Semiconductor detectors radiation damage is mentioned: [Pg.183]    [Pg.331]    [Pg.357]    [Pg.260]    [Pg.303]    [Pg.184]    [Pg.2313]    [Pg.2313]    [Pg.55]    [Pg.465]    [Pg.69]    [Pg.2165]    [Pg.24]    [Pg.24]   
See also in sourсe #XX -- [ Pg.260 ]




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