Semiconductor after neutron irradiation

Table II. Activities of Semiconductors After Neutron Irradiation ...

Activities of semiconductors after neutron Irradiation, 299t... 

Studies of the effect of 14 MeV neutron irradiation on semiconductor electronic components have an essential role, because many electronic instruments are used in intense fast neutron fields. Radiation effects can be observed at a fast neutron fluence in the order of 10 /cm at 20°C. Changes in the main characteristics of electronic circuits depend strongly on the type of semiconductor components. For example, definite changes were observed in the operating characteristics of Si(Li) detectors, diodes, transistors, and integrated circuits after the irradiation with 14 MeV neutrons up to 10 /cm fluence. Further investigations are needed to study the effect of self-recovery of the irradiated Si(Li) detectors and integrated circuits. 

Less data are available on decay after-effects from "Te. A matrix of PbTe irradiated with neutrons was found to have a chemical isomer shift of over +0-1 mm s relative to a PbTe absorber [56]. Furthermore this shift difference decreased exponentially with a time constant of about ten days, the implication being that the difference is due to radiation damage causing a defect structure which anneals at room temperature. It was proposed that a radiation-induced distortion of the band structure in the PbTe semiconductor alters the s-electron density at the nucleus. 

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