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Selective susceptors

Fig. 1. Etch rates of niobium oxide pillar and Si film, and etch selectivity of Si to niobium oxide piUar for the variation of (a) CI2 concentration, (b) coil rf power, and (c) dc-bias voltage to susceptor... Fig. 1. Etch rates of niobium oxide pillar and Si film, and etch selectivity of Si to niobium oxide piUar for the variation of (a) CI2 concentration, (b) coil rf power, and (c) dc-bias voltage to susceptor...
To investigate the crystallization phenomena induced by the external field, a cyclic force is imposed on a small portion of molecules in the amorphous structure, in addition to tiie inherent intermolecular forces. As a practical matter, this force may be applied to susceptor molecules (molecules witii dangling or floating bonds, or other defects) tiirough direct electric fields, electric fields induced by the external magnetic field, or other excitation sources. In tiiis study, it is assumed that some molecules can act as susceptors of the external field, for tiie sole purpose of inducing artificial molecular movements selectively and of observing tiie subsequent crystallization behavior. As discussed previously, the results of this study could provide a clue to mechanisms involved in the athermal crystallization of a-Si to poly-Si, which is induced by the field-enhanced molecular movements. [Pg.374]

In the search for the most suitable selective heating method for polymer-polymer composites, the susceptor efficiency in different polymeric matrix systems has been recently investigated by the use of a multimode microwave oven technology. [Pg.58]


See other pages where Selective susceptors is mentioned: [Pg.119]    [Pg.364]    [Pg.211]    [Pg.167]    [Pg.119]    [Pg.28]    [Pg.119]    [Pg.327]    [Pg.41]    [Pg.62]    [Pg.350]   
See also in sourсe #XX -- [ Pg.232 ]




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