Selective growth of carbon nanotube arrays synthesized by injection CVD method

SELECTIVE GROWTH OF CARBON NANOTUBE ARRAYS SYNTHESIZED BY INJECTION CVD METHOD 

SHULITSKI, V. A. LABUNOV, A. L. PRUDNIKAVA Belarusian State University of Informatics and Radioelectronics P. Browka 6, 220013 Minsk, Belarus Labunov cit.org.by 

HEIDERHOFF Bergische Universitat Wuppertal, Lehrstuhl fiir Electronik Rainer-Gruenter-Str. 21, 42119 Wuppertal, Germany Balk uni-wuppertal.de 

Multi-wall carbon nanotube (CNT) arrays synthesis by the atmospheric pressure CVD method has been investigated. Thermal decomposition of fluid hydrocarbons (o- and p-xylole f sl liC l which as a solution with the volatile catalyst (ferrocene Fe(CsHs)2) was introduced into the synthesis zone by injection was employed. Different metal/dielectric/semiconductor (MDS) structures, in particular Ti/SifT/Si. AI2O3 membrane/Ni catalyst were used. CNTs growth selectivity can be regulated under certain conditions. The vertically aligned close-packed CNT arrays have been obtained as well as single CNTs in the pores of AI2O3 matrix with Ni catalyst. 

The most appropriate method of CNTs synthesis for nanoelectronic applications is CVD method. Often the atmospheric pressure CVD with fluid hydrocarbons thermal decomposition in the presence of volatile catalysts with Ar as a gas-carrier is used. This method ensures the control of CNTs diameter, length, alignment and yield by manipulating the experimental parameters [1]. 

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