Selective Etching of Common Thin Film Materials

Selective Etching of Common Thin Film Materials 

The etch rate of CVD silicon nitride in HF is sensitive to the details of the deposition process. Values measured for the etch rate of Si3N4 deposited at 850°C are shown in Fig. 2.8. The best fit to these etch rates is found to be (for r in nm min-1 and cHf in % of aqueous HF)  

Etch rates in nm s I Thermal oxide CVD- nitride Undoped poly-Si Bulk Si (100) Aluminum 

An aqueous solution of 91.5% H3P04 heated to the boiling temperature of 180°C produces an etch rate of 10 nm min-1 for Si3N4, 0-2.5 nm min-1 for Si02, and 0.3 nmmin-1 for Si [Ge4], Etch rates as calculated by Eqs. (2.3) and (2.4) are listed in the table in the inner back cover of this book. 

Copyright 2002 Wiley-VCH Verlag GmbH ISBNs 3-527-29321-3 (Hardcover) 3-527-60027-2 (Electronic) 

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Selective Etching of Common Thin Film Materials I 37... 

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