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Selective Etching of Common Thin Film Materials

Selective Etching of Common Thin Film Materials [Pg.36]

The etch rate of CVD silicon nitride in HF is sensitive to the details of the deposition process. Values measured for the etch rate of Si3N4 deposited at 850°C are shown in Fig. 2.8. The best fit to these etch rates is found to be (for r in nm min-1 and cHf in % of aqueous HF)  [Pg.36]

Etch rates in nm s I Thermal oxide CVD- nitride Undoped poly-Si Bulk Si (100) Aluminum [Pg.37]

An aqueous solution of 91.5% H3P04 heated to the boiling temperature of 180°C produces an etch rate of 10 nm min-1 for Si3N4, 0-2.5 nm min-1 for Si02, and 0.3 nmmin-1 for Si [Ge4], Etch rates as calculated by Eqs. (2.3) and (2.4) are listed in the table in the inner back cover of this book. [Pg.38]

Copyright 2002 Wiley-VCH Verlag GmbH ISBNs 3-527-29321-3 (Hardcover) 3-527-60027-2 (Electronic) [Pg.39]


Selective Etching of Common Thin Film Materials I 37... [Pg.37]




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