Secondary grain growth

For the sake of comparison, primary grain growth as a function of time at constant temperature is characterized by the following rates  

With secondary grain growth in both glass-ceramics and sintered ceramics, the grain size increased as  

---

Method 2 produces what is usually referred to as self-bonded SiC by a process essentially the same as that developed for nuclear applications [2] and known as Refel silicon carbide. Refel silicon carbide contains a finely dispersed residual silicon phase accounting for between 5 and 10% of the total volume, the precise amount depending upon the porosity of the original preform. In the case of self-bonded silicon carbide elements the residual silicon is volatilized away by a final heat-treatment at over 2500 °C when recrystallization occurs resulting in grain growth and further bonding between primary and secondary carbide phases. 

Secondary Phases and Their Effect on Grain Growth... 

Some developments in grain-oriented Si-Fe alloys have used grain-growth inhibitors to enhance preferential orientation during secondary recrystallisation (Taguchi et al, 1976). The features of domain structures in grain-oriented Si-Fe have been studied by Nozawa et al. (1988). 

---