Schottky barrier ideality parameter

Fig. 16. The J- V characteristics of a Pd/a-Si H Schottky-barrier diode before ( ) and after ISO C annealing ( ) to form a uniform silicide. The insert shows the improvement of the ideality parameter for annealing at various temperatures. [From Thompson et al. (1981).]...

Junctions formed with indium and with chromium also showed reasonable Schottky barrier formation, though we find in general that the ideality factors for these devices were poorer than for the aluminium structures, with values of 2 found in both cases. There is some variation in the barrier height deduced from the value of Jq fitting to the diffusion model using the same parameters as used above we find lower values for < )b, of 0.34 eV for chromium and 0.42 eV for indium. 

Alkaline CuCN solutions were used for the first time to electrodeposit homogeneous and adherent Cu films onto silicon. Tire obtained Cu/n-Si(lll) junctions show a nearly perfect rectifying behavior. The Schottky parameters (barrier height 3>b = 630 mV ideality factor n = 1.2) do not change importantly with time. It is also demonstrated that highly adherent Ni films can be plated onto n-Si(lll) from an acidic Watts bath, if copper clusters were elecrodeposited onto the silicon surface first. 

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