Scanning near-field infrared microscopy SNIM

IR measurements on doped Si and shown that the subsurface mobile carriers can be probed by their response to an IR near-field with a spatial resolution of 30nm [48]. The group of Havenith presented a scanning near-field infrared microscopy (SNIM) system this is an IR s-SNOM set-up based on a continuous-wave optical parametric oscillator (OPO) as an excitation source with a much wider tunability compared to the usually applied CO2 lasers [49]. With this set-up, a subsurface pattern of implanted gallium ions in a topographically fiat silicon wafer was imaged with a lateral resolution of <30 nm. 

SNIM Scanning near field infrared microscopy... 

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