Sapphire, symbolism

Figure B2.1.1 Femtosecond light source based on an amplified titanium-sapphire laser and an optical parametric amplifier. Symbols used P, Brewster dispersing prism X, titanium-sapphire crystal OC, output coupler B, acousto-optic pulse selector (Bragg cell) FR, Faraday rotator and polarizer assembly DG, diffraction grating BBO, p-barium borate nonlinear crystal.

Figure B2.1.6 Femtosecond spectrometer for transient hole-burning spectroscopy with a continuum probe. Symbols used bs, 10% reflecting beamsplitter p, polarizer. The continuum generator consists of a focusing lens, a cell containing flowing water or ethylene glycol or, alternatively, a sapphire crystal and a recollimating lens.

Figure 15 Turnover rate for CO oxidation on Pd particles supported on sapphire. The points represent the experimental data from Rumpf et al. [131]. The symbols ( ) and (O) correspond to mean particle sizes of 3.9nm and 3.7 nm and particles densities of 1.6 x 1010 cm-2 and 1.3 x 1012 cm-2, respectively. The continuous curves represent the experimental fit with Eqs. (3), (4), (5) and (13) using a = 0.46 and E — E = 0.26 eV (from Ref. [144]). The dotted-dashed line represents the fit with non interacting diffusion fields around the Pd particles (from Ref. [131]).

AIN buffer layer on (0001) sapphire. Composition was determined by help of X-ray diffraction. A continuous increase of the mode energy with x was observed. An AlxGai.xN/GaN/sapphire heterostructure grown with the AIN buffer layer technique was studied in infrared reflection and Raman spectroscopy by Wetzel et al [2] (FIGURE 2). From an X-ray analysis of the c-axis an AlN-ftaction of x = 0.15 was derived. Recently, however, it was shown that AIN layers in heterostructures with GaN are coherently strained up to a thickness of at least 350 nm. This leads to misinterpretation of the AIN fraction [8], Including the deformation of the unit cell in the pseudomorphic structure above, a value 50% smaller is concluded (x = 0.08). In backscattering off the c-plane the Ai(LO) mode was determined at 752 cm 1 (square with cross symbol) in excellent agreement with the infrared reflection data [2],... 

Magnesium is a bright, silver-white alkaline earth metallic element (symbol Mg atomic no. 12). It is widely found as different salts in minerals such as boracite (borate), ankerite and dolomite (carbonates), carnallite (chloride), brucite (hydroxide), periclase (oxide), lazulite (phosphate), amphibole, cummingtonite, enstatite, gamierite, hornblende, humite, hypersthenite, iolite, jade, meUlite, monticellite, olivine, Pennine, saponite, sapphire, serpentine, talc, and tremolite (silicates), and epsomite, kainite, kieserite, and polyhalite (sulfates). 

Figure 6a compares the FRAP curves (scaled intensities) for hexadecane flowing over a wetting sapphire surface (black symbols) and over a grafted OTS monolayer (open symbols) at different shear rates. 

Figure 6 a) Fluorescence recovery after photobleaching for hexadecane flowing aver a sapphire surface (filled symbols) and over a dense OTS monolayer (open symbols), b) Evolution of the FRAP curves with incubation time t for a 1% solution of stearic acid in hexadecane. t = 0 means less than one hour. 

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