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Ripple topography

These are but a few of the scenarios being opened up by the implementation of classically based simulations. Indeed, the effectiveness of the theory used also allows for the irradiation-induced diffusion, segregation, and ripple topography growth apparent on and within various single and multicomponent substrates to be modeled (Liedke, et al. 2013). Note Although quantum mechanics would provide the more correct theoretical description, sputtering simulations based around such an approach would be far more expensive computationally with little benefit added. [Pg.67]

Similar sputter rate variations are also apparent under Oj primary ion impact on Silicon. Lowering die O2 energy further complicates matters owing to the surface oxidation induced (this results in surface swelling) and the potential for ripple topography growth (Wittmaack 1996 Wittmaack 2000 Homma 2003). [Pg.79]

Ripple topography Surface ripples that form under sputtering... [Pg.344]

Figure 14(c). Topography of the energy surface in the vicinity of a Hessian singularity. This rippled stalagmite is a schematic representation of the cumulation of local maxima and/or minima around a nonisolated Hessian singularity. [Pg.553]


See other pages where Ripple topography is mentioned: [Pg.935]    [Pg.86]    [Pg.86]    [Pg.86]    [Pg.100]    [Pg.195]    [Pg.242]    [Pg.935]    [Pg.86]    [Pg.86]    [Pg.86]    [Pg.100]    [Pg.195]    [Pg.242]    [Pg.215]    [Pg.907]    [Pg.21]    [Pg.166]    [Pg.166]    [Pg.155]    [Pg.75]    [Pg.241]    [Pg.189]    [Pg.413]   
See also in sourсe #XX -- [ Pg.75 , Pg.85 , Pg.86 , Pg.195 ]




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