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Resolvent technique model representation

Clearly, the incorporation of the cut and stick tailoring feature of projection operators into the resolvent-technique formulation, makes it a particularly adaptable modelling tool. Moreover, it enables the atomic structure of the geometric space to be reflected in the so-called site representation of the GF. [Pg.34]

The porous electrode theory was developed by several authors for dc conditions [185-188], bnt the theory is usually applied in the ac regime [92,100,101,189-199], where mainly small signal frequency-resolved techniques are used, the best example of which are ac theory and impedance spectra representation, introdnced in the previons section. The porous theory was first described by de Levi [92], who assumed that the interfacial impedance is independent of the distance within the pores to obtain an analytical solution. Becanse the dc potential decreases as a fnnction of depth, this corresponds to the assnmption that the faradaic impedance is independent of potential or that the porons model may only be applied in the absence of dc cnrrent. In snch a context, the effect of the transport and reaction phenomena and the capacitance effects on the pores of nanostructured electrodes are equally important, i.e., the effects associated with the capacitance of the ionic donble layer at the electrode/electrolyte-solntion interface. For instance, with regard to energy storage devices, the desirable specifications for energy density and power density, etc., are related to capacitance effects. It is a known fact that energy density decreases as the power density increases. This is true for EDLC or supercapacitors as well as for secondary batteries and fnel cells, particnlarly due to the distributed nature of the pores... [Pg.127]


See other pages where Resolvent technique model representation is mentioned: [Pg.124]    [Pg.472]    [Pg.125]    [Pg.352]    [Pg.283]    [Pg.372]    [Pg.196]    [Pg.161]    [Pg.16]    [Pg.97]    [Pg.384]   
See also in sourсe #XX -- [ Pg.30 , Pg.31 , Pg.32 ]




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