Recoil implantation

A recoil-implanted metal atom (radioactive M) undergoes the following chemical reaction with a metal coordination compound in a film of catcher material ... 

Fig. 11. Displacement yield of 51Cr-/3-diketonate by recoil implantation as a function of mean implantation energy (MIE) [54]...

Fig. 12. Collision cascades induced by a recoil-implanted atom with the generation of heat and pressure pulses [56]...

Chemical effects in semiconductors and thin films as well as the formation of gaseous reaction products in solids are treated separately. Another field of science producing results of interest for implantation chemistry is the chemistry of hot-atoms resulting from nuclear reactions. Especially in the case of recoil implantation where the energetic hot-atom is produced at the surface of a sample or grain before penetrating into the specimen, one finds a situation similar to ion implantation. The reader should consult the reviews on hot-atom chemistry i - )... 

In this context the source of the oxygen is unclear. It might come from impurities or from recoil implantation of the surface oxygen caused by the knock-on from the bombarding Gd ions. Other authors were doubtful about this interpretation " PAC measurements of 400 keV Eu ions in Cu did not indicate any oxidation of the Eu on annealing. 

Independent work [10], also using recoil-implantation into chromium, recorded a shift in the Ge(II) compound, GeSe, and in the two modifications... 

Fig. 15.1 Mossbauer spectra for (a) a Ge target and a natural Ge absorber (b) a Ge/chromium target and Ge absorber (c) a Ge/chromium target and GeOz absorber. Note the significantly greater effect with the recoil-implantation tedmique and also the chemical isomer shift between Ge and GeO. [Ref. 7, Fig. 1]...

Very similar results were obtained using Coulomb excitation of a nickel foil target by 25-MeV oxygen ions [3], and the Coulomb-recoil implantation technique has also been demonstrated [4]. 

Even in the ab en(pe of preferential sputtering, i.e, SA=Sg, it is not necessarily the case that the concentration ratio of A and B is uniform with depth under steady state ion bombardment. The subsurface layer can have a different concentration ratio from the bulk or the top surface even if the latter two are identical. This can occur because of the subsurface effects of ion bombardment discussed below, which can produce an altered subsurface composition. As a result, there are two altered layers possible the top surface layer where composition at steady state is completely controlled by RgA and the subsurface layer where composition is controlled by segregation, radiation induced diffusion, radiation induced segregation, recoil implantation and cascade mixing. 

The subsurface composition change expected in a homogeneous binary alloy due to recoil implantation or knock-in is controlled by the maximum energy transfer possible and is characterized by the parameter... 

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