Rates in Extraction-Exclusion Photodiodes

In the case of double heterostructure photodiodes the level of radiative generation is position dependent and reaches the highest value within the active region. 

While calculating the radiative processes rate the influence of reabsorption effects was taken into account. A reflection coefficient of 0.1 at the front surface and 1 at the back surface were assumed. 

34 Spatial dependence of radiative recombination rate in a reverse biased extraction-exclusion HgCdTe photodiode at 250 K for different values of bias voltage 

3 Charge Carrier Management (Thermal Noise Engineering) 

According to the calculated levels of g-r processes it is concluded that within the range of the chosen material parameters the prevailing process is remaining Auger generation. Total generation-recombination is primarily determined by this process. 

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