Raman scattering thermal effects

Shreve A P and Mathies R A 1995 Thermal effects in resonance Raman-scattering—analysis of the Raman intensities of rhodopsin and of the time-resolved Raman-scattering of bacteriorhodopsin J. Phys. Chem. 99 7285-99... 

Stimulated effects in nonlinear optics, such as stimulated Brillouin and Raman scattering in liquids and gases and stimulated thermal Rayleigh scattering, have been reviewed by Rank 260a)... 

We have already argued that the phenomena of Raman scattering and fluorescence cannot be distinguished from each other unless the system interacts with its thermal environment. Next we extend the model discussed in Section 18.3 to explicitly include thermal relaxation effects. Our model now consists of four levels The incoming state zrt) = 11, vi, ki) with energy fCin = -F ha>i mi = c ki ... 

The thermal effect of the Is forming reaction in an aqueous solution in the presence of alkali metal iodides was evaluated early 60th of the last Century by the colorimetric method [41]. The entropy and enthalpy of the I3 formation were calculated. By means of the Raman scattering the related equUibrium rates of forward and reverse reactions of I3 formation at the temperature of 298 K and ionic strength of 0.02 were evaluated. They amount to 6.2 X 10 M c , and 8.5 X 10 M c , respectively [42]. These data indicate that in the presence of alkali metal ions the equilibrium is shifted towards the formation of the triiodide ion, so that in comparison I3 , molecular iodine and I in aqueous solution could hardly be detected. This was confirmed by the results of quantum-chemical calculations. They revealed that in such a solution the equilibrium is shifted toward the formation of poliiodide anions [38]. 

P6richon S, Lysenko V, Remaki B, Barbier D (1999) Measurement of porous silicon thermal conductivity by micro-Raman scattering. J Appl Phys 86 4700 P6richon S, Lysenko V, Roussel P, Remaki B, Champagnon B, Barbier D, Pinard P (2000) Technology and micro-Raman characterization of thick meso-porous silicon layers for thermal effect microsystems. Sens Actuators 85 335... 

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