Pulse generators capacitors

In contrast to r measurements, in which the decay of excess carriers is monitored the generation lifetime is determined from the reverse-biased pn junction leakage current or from the pulsed MOS capacitor (22.) latter and the more popular of the two, an MOS-C is pulsed into deep depletion and the capacitance is monitored as a function of time. An appropriate analysis of the C-t response yields t. ... 

The generation lifetime is measured with the pulsed MOS capacitor or the gate-controlled diode technique. It is important to understand that the lifetime measured by this technique can, and generally does, give very different values from the recombination lifetime measured by one of the techniques indicated above. 

Electrical Characterization of Semiconductor Materials and Devices 23 4.2.2 Generation Lifetime Pulsed MOS Capacitor... 

The pulsed MOS capacitor (MOS-C) method is the most common technique to measure the generation lifetime. To determine it is necessary for scr generation to be dominant For silicon devices this is generally true when the pulsed MOS-C measurement is done at room temperature. For Xg determination the MOS-C is pulsed from accumulation into deep depletion. As a result of thermal ehp generation the device relaxes to its inversion state. [21] To extract the generation lifetime the capacitance, C, is measured as a function of time, as shown in Fig. 10(a). From such a C-t plot one generates a Zerbst Plot. [89] A Zerbst plot is a plot of vs. (Cp/C-1). It is related to the device... 

This circuit is referred to as being "monostable," because it is only stable in the "off condition for long times, but not in the "on" condition. With a small capacitor, it is used to make short pulses of electricity, and this variation is called a "pulse generator." It is a useful item to have in one s "intellectual toolbox," whenever a short burst of voltage or current is needed. 

When the light to be detected consists of a train of pulses, very high peak currents are generated inside the photomultiplier tube and a different arrangement is required (see Figure 3.19). In this case some capacitors, C, are included between the last... 

To emulate the operation of the FeRAM cell of the integrated circuit the measurement setup has to generate pulses of both polarities. The Shunt method as it is described in Section 3.2.2 is useful to exclude the influence of the sense capacitor and to reach high speed. 

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