Processing considerations for high crystallinity

Exposure to oxygen and oxidizing plasmas can affect the performance of organic semiconductor materials. Steudel, et al. has shown that etch plasmas can affect transistor material and shift the threshold voltage approximately lOO/rm away from the perimeter of the resist, and that the device layout should protect the transistor material by overlapping the resist at least by this amount [64]. 

For most OFETs processes, a major goal is achieving high crystallinity in the semiconductor and avoiding inadvertent doping of the device. Several considerations to achieve these goals will be mentioned. 

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