Process parameters homogeneous oxidation

In this part we dwell on the properties of the simplest radicals and atoms in the adsorbed layer of oxide semiconductors as well as analyse the quantitative relationships between concentrations of these particles both in gaseous and liquid phases and on oxide surfaces (mostly for ZnO), and effect of former parameters on electrophysical parameters. Note that describing these properties we pursue only one principal objective, i. e. to prove the existence of a reliable physical and physical-chemical basis for a further development and application of semiconductor sensors in systems and processes which involve active particles emerging on the surface either as short-lived intermediate formations, or are emitted as free particles from the surface into the environment (heterogeno-homogeneous processes). 

A model Phillips catalyst for ethylene polymerization has been prepared by spin coating of a Cr(III) precursor (Cr(acac)3) on a flat silicon wafer (100) covered by amorphous silica. The spin coating parameters were chosen in order to obtain a homogeneous film. The model catalyst was submitted to an activation process. The surface concentration of Cr decreased from about 0.8 to 0.4 Cr atom/nm as the temperature increased from 150 to 550°C. Direct information concerning the surface molecular species and the environment of Cr was provided by ToF-SIMS and XPS. At 350°C, the catalyst precursor was decomposed Cr species were in the form oxide and surface-anchored chromates. Upon final activation at 650°C for 6 h, Cr species were below the XPS detection limit however the model catalyst was active for ethylene polymerization at 160°C and 2 bar pressure. 

The above thermochemical values were used to fill the heterogeneous module of the kinetic scheme for the OCM reaction over a model Li/MgO catalyst with corresponding kinetic parameters (see Table III). In combination with a scheme of homogeneous methane oxidation, this set of reactions forms the desired micro-kinetic description. It allowed us to re-consider specific features of the OCM process and to obtain some unexpected results. 

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