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Primary ion implantation

As no Cesium is present in the substrate before analysis, the enhancement or suppression effect continues to increase with increasing sputtering time until steady-slate sputtering is reached. Steady state refers to the condition where the primary ion implantation rate equates to the sputtering rate of implant primary ions. [Pg.99]

Quantification is further complicated by the fact that a vast array of analytical conditions can be used in SIMS. This is realized as these can influence the surface chemistry (primary ion implantation, damage, and segregation) and thus introduce... [Pg.259]


See other pages where Primary ion implantation is mentioned: [Pg.172]    [Pg.235]   
See also in sourсe #XX -- [ Pg.71 , Pg.79 , Pg.81 ]




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