Present a-Si H FETs

With the optimum value of— 0.3 cm2 V 1 sec-1 (see Part VII), VG = 15 V and L = 4 fim, a value of fm — 5 MHz is obtained. In view of the worldwide effort now being made on a-Si H development it is likely that arrays of such devices will be used increasingly in applications in which this inherent frequency limitation is relatively unimportant. 

Matsumura, M., and Uchida, Y. (1981). J. Phys., Colloq. Orsay, Fr. Paris 42, C4-671. Matsumura, M., Hayama, H., Nara, Y., and Isibashi, K. (1980). IEEE Trans. Electron Devices Lett. EDL-1, 182. 

DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING CORNELL UNIVERSITY ITHACA, NEW YORK 

---