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Premetal dielectrics

The most commonly implemented and extensively investigated CMP steps are the preparation of planar premetal dielectrics (PMD) and interlayer dielectrics (ILD) films on wafer. Together they are labeled as oxide CMP, as they both use the same materials that are based on silicon dioxide. Both processes share the integration concerns in deposition, planarity, and defectivity. [Pg.7]

Kim S-D, Hwang I-S, Choi K-S. Hard-pad-based CMP of premetal dielectric planarization. J Electrochem Soc 2003 150(8) G450-G455. [Pg.79]

Dielectric CMP is used to planarize intermetal dielectrics (IMD) (represented by ILDl, ILD2, or ILD3) and premetal dielectrics (represented by ILDO). The slurry typically used in this process is at high pH (10-12), KOH or NH4OH based and silica abrasive. The hydroxide ion is needed to hydrolyze the substrate, which in this case is Si02-... [Pg.433]

See other pages where Premetal dielectrics is mentioned: [Pg.139]    [Pg.218]    [Pg.249]    [Pg.512]    [Pg.530]    [Pg.139]    [Pg.218]    [Pg.249]    [Pg.512]    [Pg.530]   
See also in sourсe #XX -- [ Pg.139 ]



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