Prebaking, poly

Poly(methyl methacryIate-co-3-oximino-2-butanone methacrylate) (P(M-OM) and poly(methyl methacrylate-co-3-oximino-2-butanone-methacrylate-co-methacrylonitrile) (P(M-OM-CN)) were dissolved in methoxyethyl acetate (10% solution). Where appropriate, the specified amount of sensitizer was added to the solutions before coating onto a silicon substrate with a Headway Research spinner. Films were prebaked at 120 C for 60 min. 

Figure 2. Infrared spectra of atactic poly(a,a-dimethylbenzyl methacrylate)s unexposed (A) and exposed(B) to electron-beam, isotactic poly (a,a-dimethylbenzyl methacrylate) exposed(C) and poly(methacrylic acid)(D). Exposure charge density 1.6 x 10-4 C/cm2, film thickness 0.5 pm, prebake at 142° C. Reproduced with permission from Ref. 2. Copyright 1983, "Springer...

The carbonyl stretching band in the infrared spectrum of isotactic poly (a,a-dimethylbenzy 1 methacrylate) prebaked at 142°C for 1 hr indicated the formation of a small amount of acid group during the prebake, while the atactic polymer showed no change in the spectrum at this temperature. This may be the reason why the isotactic polymer showed a lower 7-value than the atactic polymer (Table III). 

Wijdenes and Geomini (170) examined the effects of the phenolic resin composition, its molecular weight distribution, solvent composition, and prebake temperature on the interfacial layer formation. They found that combined use of poly(p-vinylphenol) (structure 3.10) as matrix resin and cyclohexanone as the casting solvent in the diazoquinone resist formulation minimizes mixing of the two layers and yields a capped PCM structure without any plasma treatment. 

The photopolymerizable composition can be used both as liquids to coat a substrate with light sensitive films and as dry photoresist films. In the latter case, the photoresist is a trilayer pie consisting of a top layer made of poly (ethylene terephthalate), a middle layer being the photopolymerizable composition, and an underlayer made of polyethylene. The underlayer is removed before exposure and the remained bilayer composite is laminated onto a clean substrate. The article is prebake to anneal a polymer layer and to enhance adhesion to the substrate. The selective exposure by the UV light through the top layer hardens the exposed areas of the photoresist. After exposure, the top layer is removed and the photoresist layer... 

Figure 7 shows photo-images obtained with the composite resist made of poly(2-methyl-l-pentene sulfone) and Varcum positive tone patterns are shown on the left, and negative tone patterns on the right. The resists films were spin-coated onto silicon wafers from an AZ-thinner solution of poly(2-methyl-l-pentene sulfone) (16.5 wt% in solid) and Varcum, and prebaked at 100°C for 20 min. The UV exposures were carried out with a medium pressure mercury lamp with a dose of 200 mJ/cm2 of 254 nm light it can be reduced to 100 mJ/cm2 for full development. 

Figure 2. FT-IR Spectra of Poly[4-(l-pheno3qrethoxy)styrene] Containing 5 wt% of Ph3S SbFg a) prebaked at 90 C for 2 minutes and b) exposed to 10 mJ/cm2 of 254 nm radiation and postbaked at 110 C for 2 minutes.

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