Postdeposition film annealing

Figure 6.22. XRD spectra of CuInS2 films grown by AACVD (a) untreated films, (b) film III with postdeposition annealing, and (c) GAXRD spectrum of film IV.

After postdeposition Ar and Ar/S-annealing, the films were studied again using PL. S-anneals reduced the relative intensities of the PL1, PL4, and broad emission bands, whereas Ar-anneals increased the relative intensity of the PL1 band. This can be seen in Fig. 6.28. We can also see in this figure that S-anneals suppressed the broad near-band-edge emission from the trailing edge samples. When EDS measurements were performed on the films after S-anneals, an... 

We can conclude this section with the insight, gained from this overview of the electrical and photoconductivity properties of these films, that, in spite of the many studies already carreid out, a comprehensive and systematic study of these properties and their correlation with a wide range of deposition parameters is still needed in order to understand what determines these properties. These studies should also include postdeposition treatments— not so much annealing, which has been carried out, but surface treatments (e.g., immersion in triethanolamine), which could show the importance (or lack of it) of the crystal surface condition. 

Figure 27. Temperature dependence of resistance of a particular (Ti, Bi)-1223 film made on RABiTS by laser ablation and postdeposition annealing in flowing pure Ar, showing a zero-resistance superconducting transition temperature of 107 K.

Based on the synthesis of Hg-1212 films, high quality epitaxial Hg-1223 films were successfully grown by rf sputtering of Ba2Ca2Cu307 and postdeposition annealing with Hg supplied from Hg-containing pellets " . The precursor Ba2Ca2Cu307 films were... 

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