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Postapply bake

National Science Foundation Optical density Postapply bake Photoactive compound Photochemical acid generator Positron annihilation spectroscopy Poly(fert-butoxycarbonyloxystyrene)... [Pg.40]

Figure 11.13 SEM images of line-and-space patterns printed with 60-nm-thick Shipley XP-98248 resist on bare silicon and exposed at 157 nm. Process conditions postapplied bake 130°C/60 seconds, postexposure bake 130°C/90 seconds, developer 0.26N tetramethylammonium hydroxide (without surfactant) for 20 seconds. Unexposed resist loss 6nm. Exposure energy 1.35 mJ/cm. Note the significant surface inhibition layer, showing poisoning effects. ... Figure 11.13 SEM images of line-and-space patterns printed with 60-nm-thick Shipley XP-98248 resist on bare silicon and exposed at 157 nm. Process conditions postapplied bake 130°C/60 seconds, postexposure bake 130°C/90 seconds, developer 0.26N tetramethylammonium hydroxide (without surfactant) for 20 seconds. Unexposed resist loss 6nm. Exposure energy 1.35 mJ/cm. Note the significant surface inhibition layer, showing poisoning effects. ...
See other pages where Postapply bake is mentioned: [Pg.41]    [Pg.169]    [Pg.41]    [Pg.169]   
See also in sourсe #XX -- [ Pg.41 , Pg.95 , Pg.204 ]



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