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Polysulfide junction, CdSe

REIchman and russak Illuminated CdSe-Polysulfide Junctions... [Pg.363]

The importance of controlling the operating temperatures of single-crystal and polycrystalline n-CdSe/polysulfide/CoS liquid junction cells to obtain the maximum possible photoconversion has been emphasized [55], In fact, a dramatic effect of temperature was established on the power output of the cells, particularly those based on thin film electrodes. [Pg.220]

Fig. 5.5 SEM surface view and cross section of an electrodeposited, ca. 1 p.m thick, CdSe/li film subjected to accelerated photocorrosion by the apphcation of -0.1 V vs. Pt bias in polysulfide solution under a focused, high-power (1 W cm ) solar illumination for 30 min. The coherence of the as-deposited film morphology is evident. The authors emphasize that, even in this situation, the liquid junction nature prevents the flow of high leakage currents during the process (as it might be the case with a solid junction). (Reprinted from [99], Copyright 2009, with permission from Elsevier)... Fig. 5.5 SEM surface view and cross section of an electrodeposited, ca. 1 p.m thick, CdSe/li film subjected to accelerated photocorrosion by the apphcation of -0.1 V vs. Pt bias in polysulfide solution under a focused, high-power (1 W cm ) solar illumination for 30 min. The coherence of the as-deposited film morphology is evident. The authors emphasize that, even in this situation, the liquid junction nature prevents the flow of high leakage currents during the process (as it might be the case with a solid junction). (Reprinted from [99], Copyright 2009, with permission from Elsevier)...
In this paper the calculated I-V characteristics using a model that includes depletion region recombination (2J are compared with experimental results for single-crystal CdSe electrode/polysulfide electrolyte junctions. In particular the predicted effects of redox ion concentration and light intensity on the I-V characteristics are analyzed and compared with experimental data. [Pg.359]

Fig. 19 Schematic depictions of (a) the preparation of a cobalt pyrite (C0S2) film electrode via the thermal sulfidation of a 100 nm thick cobalt film deposited over a titanium adhesion layer on a roughened borosilicate glass substrate by electron-beam evaporation and (b) the incorporation of an as-synthesized C0S2 film on glass into a CdS/ CdSe-sensitized thin-layer liquid-junction quantum dot-sensitized solar cell (QDSSC) filled with sulfide/polysulfide electrolyte to demonstrate the high QDSSC performance enabled by the C0S2 counter electrode. Reproduced from ref. 167 with permission from the American Chemical Society. Fig. 19 Schematic depictions of (a) the preparation of a cobalt pyrite (C0S2) film electrode via the thermal sulfidation of a 100 nm thick cobalt film deposited over a titanium adhesion layer on a roughened borosilicate glass substrate by electron-beam evaporation and (b) the incorporation of an as-synthesized C0S2 film on glass into a CdS/ CdSe-sensitized thin-layer liquid-junction quantum dot-sensitized solar cell (QDSSC) filled with sulfide/polysulfide electrolyte to demonstrate the high QDSSC performance enabled by the C0S2 counter electrode. Reproduced from ref. 167 with permission from the American Chemical Society.

See other pages where Polysulfide junction, CdSe is mentioned: [Pg.361]    [Pg.363]    [Pg.365]    [Pg.367]    [Pg.367]    [Pg.96]    [Pg.223]    [Pg.226]    [Pg.231]    [Pg.367]   
See also in sourсe #XX -- [ Pg.363 ]




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