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Poly test pattern

Okano and coworkers have patterned poly(N-isopropylacryl-amide) (PNIPAAm), a material similar to BSA and PEG in that it does not adhere to cells at room temperature. In this experiment, a composite solution of PNIPAAm dissolved in propanol (55 wt%) was uniformly coated inside a commercial cell culture dish. The polymer was then patterned, using standard e-beam lithography, onto the surface of a cell culture dish to test the dynamic behavior of cells for potential clinical applications. A metal mask (60 mm o.d. [Pg.272]

It may be asked whether the changes in the pattern of poly(ADP-ribose) modified proteins are specific for myoblast differentiation. To answer this question we tested a myoblast clone that had lost its capacity to fuse. This clone (Nf-1) was isolated from the E63 myoblast cell line [1 ]. Cultures of Nf-1 were maintained for 8 days and were analyzed for poly(ADP-ribose) modified proteins. Figure 3 shows that the pattern of modified proteins isolated from the nonfusing variant is similar to that of prefusion E63 myoblasts (5 days). The 116 kD modified protein is present in both cultures, whereas the changes in poly(ADP-ribose) acceptor(s) accompanying differentiation are not observed. We have recently observed that the 116 kD modified protein is also formed if differentiation of E63 myoblasts is inhibited by DMSO or UV light. [Pg.443]

Fig. 2 Process flow (a) Starting Material, (b)Deposit SisN (c)Deposit poly-silicon, (d) Deposit Al, (e) Resist coating, (f) Soft bake, (g) Exposure mask, (h) Develop resist (i) Poly-silicon RIE, (j) Alum etch and stripe resist, ion(k) Dry oxidation, (1) Poly-silicon nanogap pattern with pad Pt/Au fabrication( Electrical checking of the device can be performed on the fabricated pad)(Repeat step (a) to (j) for mask 2). Fig. 3 shows the circuit after serial impedance is measured, a simple resistor model is developed representing the substrate and polysilicon layer. The capacitor also found in series to describe the device with no liquid test... Fig. 2 Process flow (a) Starting Material, (b)Deposit SisN (c)Deposit poly-silicon, (d) Deposit Al, (e) Resist coating, (f) Soft bake, (g) Exposure mask, (h) Develop resist (i) Poly-silicon RIE, (j) Alum etch and stripe resist, ion(k) Dry oxidation, (1) Poly-silicon nanogap pattern with pad Pt/Au fabrication( Electrical checking of the device can be performed on the fabricated pad)(Repeat step (a) to (j) for mask 2). Fig. 3 shows the circuit after serial impedance is measured, a simple resistor model is developed representing the substrate and polysilicon layer. The capacitor also found in series to describe the device with no liquid test...

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Poly patterns

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