Poly -substrate etching

Polystyrene-PDMS block copolymers4l2), and poly(n-butyl methacrylate-acrylic acid)-PDMS graft copolymers 308) have been used as pressure sensitive adhesives. Hot melt adhesives based on polycarbonate-PDMS segmented copolymers 413) showed very good adhesion to substrates with low surface energies without the need for surface preparation, such as etching. 

Good bonding was obtained to several substrates under aqueous conditions. Values obtained were 41 to 10-3 MPa to composite resins, and 9-8 to 15-6 MPa to stainless steel (Table 9.6). They were also reported as adhering to porcelain. No adhesion was obtained to untreated dentine or enamel. The cements could be bonded to enamel etched with add (3-5 MPa) and to dentine conditioned with poly(acrylic acid) (10 MPa). 

Figure 20, Reflectivity variations during the etching of a poly-silicon film on an Si02 substrate, (Reproduced with permission from Ref, 110,)...

In one report, no bonding plate was needed to create the sealed quartz channels. These were achieved by first depositing a layer of poly-Si the quartz substrate, which was then wet etched through a tiny hole to create a quartz channel and a thin Si02 roof [154],... 

Other recent applications of AFM-SECM included the study of the iontophoretic transport of [Fe(CN)6]4 across a synthetic track-etched polyethylene terephthalate membrane by Gardner et al. [193]. They made the structure and flux measurements at the single pore level and found that only a fraction of candidate pore sites are active in transport. Demaille et al. used AFM-SECM technique in aqueous solutions to determine both the static and dynamical properties of nanometer-thick monolayers of poly(ethylene glycol) (PEG) chains end-grafted to a gold substrate surface [180]. 

Only recently first reports appeared describing the potential of the nanostructured thin block copolymer films for lithographic etching. A thin film of polystyrene-block-polybutadiene with a hexagonal cylindrical morphology where the poly-(butadiene) cylinders were oriented perpendicular to the substrate was deposited on a silicon wafer and selectively decomposed by treatment with ozone or converted with osmium tetroxide. By a subsequent reactive ion etching process the pattern could be inscribed into the surface of the silicon wafer yielding small holes or islands with a lattice constant of 27 nm and hole/island sizes of 13 nm [305,312]. 

The oxidizing and etching effects that help in particle removal may lead to a rougher surface on the substrate such as poly-Si [37,38]. Therefore, a balance must be maintained between the need for greater etching depth to remove... 

Fig. 12.4. Continuous poly-Si film formed by the ALILE process on a 3-in substrate (To obtain this figure the Al on top of the poly-Si film was sele, removed by wet chemical etching), (from [28])...

Practical consequences of Eg modification in polymer films include significant changes of dissolution, diffusional and etching characteristics, mechanical creep behavior, and adhesion. Figure 17.30 shows a plot of the effective diffusion coefficient of perfluorooctane sulfonate photoacid as a function of film thickness of partially protected poly(4-t-butyloxycarbonyloxstyrene). The profile shows asymptotic behavior at 600 A, below which diffusion slows down remarkably, probably due to interfacial and confinement effects. Clearly, the interaction of the first few hundred angstroms of the film with the substrate determines its adhesion and can alter its electrical and optical properties as well as its topographical and surface characteristics. ... 

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