PMC Decay in the Depletion Region

Experimental evidence with very different semiconductors has shown that at semiconductor interfaces where limited surface recombination and a modest interfacial charge-transfer rate for charge carriers generate a peak 

The numerical calculation of the potential-dependent microwave conductivity clearly describes this decay of the microwave signal toward higher potentials (Fig. 13). The simplified analytical calculation describes the phenomenon within 10% accuracy, at least for the case of silicon Schottky barriers, which serve as a good approximation for semiconduc-tor/electrolyte interfaces. The fact that the analytical expression derived for the potential-dependent microwave conductivity describes this phenomenon means that analysis of the mathematical formalism should 

The decrease of the PMC signal toward increasing depletion therefore reflects the increasing dynamics of minority carriers passing the space charge layer. No classical electrochemical technique has up to now permitted observation of this phenomenon with such clarity. 

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