Plasma Evaporation

In some cases, the deposition rate can be increased by the action of a plasma in a process known as activated reactive evaporation (ARE). PI The plasma enhances the reactions and modifies the growth kinetics of the deposit. 

Another evaporation technique is molecular beam epitaxy (MBE). MBE produces extremely pure and very thin films with abrupt composition changes and is being considered for extremely exacting electronic and optoelectronic applications. PI However, the deposition rate is very slow and the process is still considered experimental. 

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Plasma evaporation and pyrolysis of carbon to form Fullerenes... 

K. Akashi, Preparation of Superconducting Y-Ba-Cu-0 Films by a Reactive Plasma Evaporation Method, Applied Physics Letters, Vol.52, 1988, pp. 1274-1276. 

T. Miyata, S. Tsukada, T. Minami, Preparation of anatase Ti02 thin films by vacuum arc plasma evaporation . Thin Solid Eilms, 496, 136-140, (2006). 

H. Huang, X. Yao, Preparation and characterization of rutile Ti02 thin films by mist plasma evaporation . Surface and Coatings Technology, 191, 54—58, (2005). 

K. Santra, C.K. Sarkar, M.K. Mukheijee, B. Ghosh, Copper oxide thin films grown by plasma evaporation method. Thin Solid Films 213, 226-229 (1992)... 

Fig. 33. X-ray pole figures of the (108) peak of (a) a seed film prepared by RF plasma evaporation on a MgO single-crystal substrate and (b) a Y123 LPE-grown film. Note that several types of grain orientation exist for the seed film, however the obtained LPE film demonstrates a good crystallinity because formation of inplane aligned island crystallites on the 100 MgO surface is followed by their coalescence and a spiral growth development over the whole surface (Ishida et al. 1997).

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