Photon-induced hopping

Evidence for this process was given by Milward and Neuringer [166], who reported an absorption between 10 and 90 cm-1 ( 1.2 and llmeV) with a broad maximum in n-type silicon with neutral Nr ° in the 1017-1018 cm 3 

Compensated n-type silicon Donor arsenic Acceptor boron 

Graber, M. Dreschler, D.M. Hoffmann, T. Detchprom, A. Amano, I. Akasaki, in Defects in Semiconductors 18, ed. by M. Suezawa, H. Katayama-Yoshida (Trans Tech, Switzerland, 1995) Mater. Sci. Forum 196—201, 17 

Ammerlaan, in Properties of Crystalline Silicon, EMIS Datareviews Series No 20, ed. by R. Hull (INSPEC Publication, London, 1999), pp. 659-662 

Andreev, T.M. Lifshits, High-Purity Subst. (Russian Journal) 5, 7 (1990) 

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That is, the semi-classical approximation to the photon absorption rate is equivalent to a Landau-Zener treatment of the probability of hopping from Vj -i-hco to Vf induced by the electronic coupling perturbation p, f (s,0,Q). 

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